Name: Labymos TLC2201 Transresistance Amplifier TIA Module pA nA uA mA 4 Gears of Feedback Resistor
Brand: Labymos
SKU: 75WAN6MP1BJ4
Availability: OutOfStock

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Labymos TLC2201 Transresistance Amplifier TIA Module pA nA uA mA 4 Gears of Feedback Resistor

<ul><li>These devices combine the noise performance of the lowest noise amplifiers with the direct current precise previously only available in bipolar amplifiers.</li><li>The advanced process uses silicon gate technology to obtain input offset voltage stability, the temperature and time far beyond what can be achieved with metal gate technology.</li><li>Additionally, this technology makes it possible to let the input impedance levels to meet or exceed those expensive insulating isolation devices.</li></ul>

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are designed to withstand -100mA inrush current without continuous latch-up. Wide applications, suitable for TIA transimpedance amplifier, weak current detection, conversion, silicon photo detection, photodetector.Specifications:Name: Transresistance Amplifier ModuleMaterial: printed circuit boardModule model: TLC2201Module power supplys: +5VInput channel: 1 channelInput signal form: current inputInput frequency: <1KHzInput noise voltage: 0.7uV@0.1Hz-10HzFeedback resistor (four gears optional):Transimpedance R-3=1GohmTransimpedance R-4=10MohmTransimpedance R-5=0.1MohmTransimpedance R-6=1kohm (default R3).Application type: TIA transimpedance amplifier, weak current detection, conversion, silicon photo detection, photodetectorOutput channel: 1 channelOperating temperature range: -40°C ~+85°°CChip parameters:Module protection: power reverse polarity protectionModule interface type: power XH2.54-3P plug-in interface, SMA signal input and output!Main chip: bias current is pA level, high preciseThe relationship between the output voltage Vout and the input current I: Vout=I*R-3 (R-3 defaults to 1GOhm, input and output are in-phase relationship)Circuit connection method: Using the typical transimpedance I/V circuit connection method, the current measurement with the highest accuracy in principle under the current technical level can be achieved.Input current ranges: 1pA-3.3nA (R-3=1GOhm)Low input bias voltage: MAX: 500uVExcellent offset voltage stability vs. temperature: 0.5uV/°CItem size: 75 * 40 * 15mm / 2.95 * 1.57 * 0.59inItem weight: 20g / 0.71ouncePackage size: 120 * 80 * 20mm / 4.72 * 3.15 * 0.79inPackage weight: 22g / 0.78ouncePacking List:1 * Transresistance Amplifier Module

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